NXH020P120MNF1PTG
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$6.81
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Item specifics
- Brand onsemi
- Channel Type Dual N Channel
- Continuous Drain Current Id 51A
- Current - Continuous Drain (Id) @ 25°C 51A (Tc)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- FET Feature Silicon Carbide (SiC)
- FET Type 2 N-Channel (Dual) Common Source
- Gate Charge (Qg) (Max) @ Vgs 213.5nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds 2420pF @ 800V
- Manufacturer onsemi
- Maximum Operating Temperature + 150 C
- Mfr onsemi
- Minimum Operating Temperature - 40 C
- Mounting Style Press Fit
- Operating Temperature -40°C ~ 150°C (TJ)
- Package Tray
- Package / Case Module
- Packaging Tray
- Power - Max 119W (Tj)
- Power Dissipation 119W
- Product Power MOSFET Modules
- Product Category Discrete Semiconductor Modules
- Product Status Active
- Product Type Discrete Semiconductor Modules
- Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 20V
- Subcategory Discrete Semiconductor Modules
- Technology SiC
- Type Half Bridge Module
- Vgs(th) (Max) @ Id 4.3V @ 20mA
Product Description
onsemi
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