NXH040P120MNF1PG
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$5.58
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Item specifics
- Base Product Number onsemi
- Channel Type Silicon Carbide (SiC)
- Continuous Drain Current Id onsemi
- Current - Continuous Drain (Id) @ 25°C 122.1nC @ 20V
- Drain to Source Voltage (Vdss) Discrete Semiconductor Modules
- FET Feature Discrete Semiconductor Modules
- FET Type 56mOhm @ 25A, 20V
- Input Capacitance (Ciss) (Max) @ Vds 30A (Tc)
- Maximum Operating Temperature onsemi
- Mounting Type Module
- Number of Channels 74W
- Number of Elements per Chip Tray
- Operating Temperature Tray
- Package Type Active
- Power - Max 2 N-Channel (Dual) Common Source
- Rds On (Max) @ Id, Vgs 4.3V @ 10mA
- Rise Time 1200V (1.2kV)
- Series Discrete Semiconductor Modules
- Transistor Polarity -40°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 1505pF @ 800V
Product Description
onsemi
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