IXA20PG1200DHGLB
Item specifics
- Additional Feature HIGH RELIABILITY, UL RECOGNIZED
- Case Connection ISOLATED
- Collector Current-Max (IC) 32 A
- Collector Emitter Breakdown Voltage 1.2kV
- Collector Emitter Voltage (VCEO) 2.1V
- Collector-Emitter Voltage-Max 1200 V
- Configuration Half Bridge
- Current - Collector (Ic) (Max) 32A
- Current - Collector Cutoff (Max) 125µA
- Element Configuration Single
- Gate-Emitter Voltage-Max 20V
- Height 5.5mm
- IGBT Type PT
- Input Standard
- JESD-30 Code R-PDSO-G9
- Length 25mm
- Manufacturer IXYS Corporation
- Max Collector Current 32A
- Max Operating Temperature 150°C
- Max Power Dissipation 130 W
- Min Operating Temperature -55°C
- Mount Surface Mount
- Mounting Type Surface Mount
- NTC Thermistor No
- Number of Elements 2
- Number of Pins 9
- Number of Terminals 9
- Number of Terminations 9
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case SMD/SMT
- Package Shape RECTANGULAR
- Part Status Active
- Pin Count 9
- Polarity/Channel Type N-CHANNEL
- Power - Max 130W
- Power Dissipation-Max 130W
- Power Dissipation-Max (Abs) 130 W
- Reach Compliance Code compliant
- RoHS Compliant
- RoHS Status RoHS Compliant
- Series --
- Supplier Device Package ISOPLUS-SMPD™.B
- Surface Mount YES
- Terminal Finish Nickel (39) Tin (984)
- Terminal Form GULL WING
- Terminal Position DUAL
- Transistor Application POWER CONTROL
- Transistor Element Material SILICON
- Turn Off Time-Nom (toff) 350 ns
- Turn On Time 110 ns
- Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 15A
- VCEsat-Max 2.1 V
- Voltage - Collector Emitter Breakdown (Max) 1200V
- Width 23mm
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