IRF60R217
Item specifics
- Avalanche Energy Rating (Eas) 124 mJ
- Case Connection DRAIN
- Collector- Emitter Voltage VCEO Max 1.2 kV
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 58A
- Current - Continuous Drain (Id) @ 25°C 58A Tc
- Drain to Source Voltage (Vdss) 60V
- Drain-source On Resistance-Max 0.0099Ohm
- Drive Voltage (Max Rds On,Min Rds On) 6V 10V
- DS Breakdown Voltage-Min 60V
- ECCN Code EAR99
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 2170pF @ 25V
- JEDEC-95 Code TO-252AA
- JESD-30 Code R-PSSO-G2
- Lead Free Lead Free
- Maximum Operating Temperature + 150 C
- Mfr PEI-Genesis
- Minimum Operating Temperature - 55 C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Style SMD/SMT
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package Bulk
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging Tape & Reel (TR)
- Part Status Active
- Pd - Power Dissipation 150 W
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Power Dissipation-Max 83W Tc
- Product IGBT Silicon Modules
- Product Status Active
- Published 2013
- Pulsed Drain Current-Max (IDM) 217A
- Rds On (Max) @ Id, Vgs 9.9m Ω @ 35A, 10V
- RoHS Status ROHS3 Compliant
- Series StrongIRFET™
- Terminal Form GULL WING
- Terminal Position SINGLE
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3.7V @ 50μA
Product Description
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