APT48M80L

APT48M80L

Product Code: APT48M80L
Availability: In Stock
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Item specifics

  • Additional Feature FAST SWITCHING, AVALANCHE RATED
  • Avalanche Energy Rating (Eas) 1979 mJ
  • Base Product Number APT48M80
  • Brand IXYS
  • Case Connection DRAIN
  • Channel Mode Enhancement
  • Configuration Single
  • Current - Collector (Ic) (Max) 32A
  • Current - Collector Cutoff (Max) 125μA
  • Current - Continuous Drain (Id) @ 25°C 49A (Tc)
  • Drain to Source Voltage (Vdss) 800 V
  • Drain-source On Resistance-Max 0.2 Ω
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • DS Breakdown Voltage-Min 800 V
  • FET Technology METAL-OXIDE SEMICONDUCTOR
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 305 nC @ 10 V
  • Height 21.46 mm
  • IGBT Type PT
  • Input Standard
  • Input Capacitance (Ciss) (Max) @ Vds 9330 pF @ 25 V
  • JEDEC-95 Code TO-264AA
  • JESD-30 Code R-PSFM-T3
  • JESD-609 Code e3
  • Length 16.26 mm
  • Manufacturer IXYS
  • Maximum Operating Temperature + 150 C
  • Mfr Microchip Technology
  • Minimum Operating Temperature - 55 C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Style Through Hole
  • Mounting Type Through Hole
  • NTC Thermistor No
  • Number of Elements 1
  • Number of Terminals 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Package Tube
  • Package / Case TO-247-3
  • Package Shape RECTANGULAR
  • Packaging Tube
  • Part Status Active
  • Pbfree Code Yes
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Pin Count 3
  • Polarity/Channel Type N-CHANNEL
  • Power - Max 130W
  • Power Dissipation (Max) 1135W (Tc)
  • Product IGBT Silicon Modules
  • Product Category IGBT Modules
  • Product Status Active
  • Product Type IGBT Modules
  • Pulsed Drain Current-Max (IDM) 173 A
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 200mOhm @ 24A, 10V
  • Reach Compliance Code compliant
  • Rise Time 42 ns
  • RoHS Details
  • RoHS Status ROHS3 Compliant
  • Subcategory IGBTs
  • Supplier Device Package TO-264 [L]
  • Surface Mount NO
  • Technology Si
  • Terminal Finish PURE MATTE TIN
  • Terminal Form THROUGH-HOLE
  • Terminal Position SINGLE
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Transistor Polarity N-Channel
  • Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 15A
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 5V @ 2.5mA
  • Voltage - Collector Emitter Breakdown (Max) 1200V
  • Width 5.31 mm

Product Description

Microchip Technology

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