2N6768

2N6768

Product Code: 2N6768
Availability: In Stock
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Price: $1.55
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Item specifics

  • Additional Feature HIGH RELIABILITY
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 14A
  • Current - Continuous Drain (Id) @ 25°C 14A Tc
  • Drain to Source Voltage (Vdss) 400V
  • Drain-source On Resistance-Max 0.4Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 400V
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
  • HTS Code 8541.29.00.95
  • JESD-30 Code O-MBFM-P2
  • JESD-609 Code e0
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Terminations 2
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-204AE
  • Packaging Bulk
  • Part Status Active
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Pin Count 2
  • Power Dissipation-Max 4W Ta 150W Tc
  • Published 1997
  • Pulsed Drain Current-Max (IDM) 56A
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 400m Ω @ 14A, 10V
  • RoHS Status Non-RoHS Compliant
  • Terminal Finish TIN LEAD OVER NICKEL
  • Terminal Form PIN/PEG
  • Terminal Position BOTTOM
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4V @ 250μA

Product Description

Microsemi Corporation

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