1HN04CH-TL-W

1HN04CH-TL-W

Product Code: 1HN04CH-TL-W
Availability: In Stock
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Price: $2.62
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Item specifics

  • Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
  • Contact Plating Tin
  • Continuous Drain Current (ID) 270mA
  • Current - Continuous Drain (Id) @ 25°C 270mA Ta
  • Drain Current-Max (Abs) (ID) 0.27A
  • Drain to Source Voltage (Vdss) 100V
  • Drain-source On Resistance-Max 8Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 4V 10V
  • ECCN Code EAR99
  • Fall Time (Typ) 39 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Input Capacitance (Ciss) (Max) @ Vds 15pF @ 20V
  • JESD-30 Code R-PDSO-G3
  • JESD-609 Code e6
  • Lead Free Lead Free
  • Lifecycle Status ACTIVE (Last Updated: 20 hours ago)
  • Max Power Dissipation 600mW
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Channels 1
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature 150°C TJ
  • Package / Case TO-236-3, SC-59, SOT-23-3
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Pbfree Code yes
  • Published 2011
  • Rds On (Max) @ Id, Vgs 8 Ω @ 140mA, 10V
  • Rise Time 7.4ns
  • RoHS Status ROHS3 Compliant
  • Terminal Form GULL WING
  • Terminal Position DUAL
  • Transistor Element Material SILICON
  • Turn On Delay Time 10 ns
  • Turn-Off Delay Time 58 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 2.6V @ 100μA

Product Description

ON Semiconductor

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